Seoul, South Korea

Jang-Min Yoo


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Innovator and Inventor Jang-Min Yoo: Pioneering Nonvolatile Memory Technology

Introduction

Jang-Min Yoo is a prominent inventor based in Seoul, South Korea. He is best known for his innovative contributions to the field of nonvolatile memory devices. With a keen focus on high-voltage MOS transistors, his work has significant implications in the semiconductor industry.

Latest Patents

Jang-Min Yoo holds a patent titled "Nonvolatile memory devices including high-voltage MOS transistors with floated drain-side auxiliary gates and methods of fabricating the same." This invention includes high-voltage MOS transistors that feature a floated drain-side auxiliary gate. The design incorporates a source region and a drain region located within a semiconductor substrate, with a main gate electrode positioned between these regions. The unique stacking of lower and upper drain-side auxiliary gates enhances the functionality of these transistors, ensuring they are insulated from the substrate and the main gate electrode. The methods for fabricating these transistors are also part of this innovative patent.

Career Highlights

Jang-Min Yoo's career has been marked by his dedication to advancing semiconductor technologies. He currently works at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His commitment to research and development has led to the successful filing of his patent, showcasing his inventive spirit and expertise in nonvolatile memory solutions.

Collaborations

Throughout his career, Jang-Min Yoo has collaborated with esteemed colleagues such as Sung-Hoi Hur and Young-Min Park. These collaborations have fostered an environment of innovation and have contributed to the successful development of advanced semiconductor technologies.

Conclusion

Jang-Min Yoo's contributions to the field of nonvolatile memory technology exemplify the spirit of innovation. With a groundbreaking patent under his name and a collaborative approach to research, he continues to push the boundaries of what is possible in semiconductor design. His work is an inspiring testament to the power of creativity and ingenuity in the electronics industry.

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