Janet L Poetzinger is a notable inventor based in Pleasant Valley, NY (US). She has made significant contributions to the field of thin film wiring structures, holding a total of 3 patents. Her work focuses on the discrete fabrication of multi-layer thin film technologies, which are essential in modern electronic applications.

Latest Patents

One of her latest patents is titled "Discrete fabrication of multi-layer thin film, wiring structures." This invention describes a multilayer, three-dimensional wiring matrix fabricated from a plurality of individually testable plane pair sub-units. Each sub-unit includes a compensator with capping layers laminated on either side. The compensator features a dielectric encapsulated foil that has been patterned with holes. Metallization patterns on the surfaces provide orthogonal wiring and electrical connections, ensuring efficient functionality. Another significant patent is related to the fabrication of discrete thin film wiring structures, which outlines a process for creating testable sub-units and joining them to form a complete wiring matrix.

Career Highlights

Janet Poetzinger is associated with the International Business Machines Corporation (IBM), where she has been instrumental in advancing thin film technologies. Her innovative approaches have led to the development of efficient wiring structures that are crucial for modern electronics.

Collaborations

Throughout her career, Janet has collaborated with esteemed colleagues such as Scott G Ehrenberg and L Wynn Herron. These partnerships have fostered a collaborative environment that enhances innovation and technological advancement.

Conclusion

Janet L Poetzinger's contributions to the field of thin film wiring structures exemplify her dedication to innovation. Her patents and work at IBM highlight her role as a leading inventor in this critical area of technology.