This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1992.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992
Title: Janes H Comfort: Innovator in Bipolar Junction Transistor Technology.
Introduction
Janes H Comfort is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar junction transistors. His innovative approach has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
Janes H Comfort holds a patent for a "Process for fabricating low capacitance bipolar junction transistor." This invention relates to a bipolar transistor that incorporates, in a raised base regime, an emitter, collector pedestal, and intrinsic and extrinsic bases, all of which are self-aligned. The process for fabricating such devices achieves self-alignment using a single lithographic and masking step. The structure of the transistor includes a composite dielectric isolation layer that not only facilitates various functions during device fabrication but also ensures desired electrical characteristics during operation. The composite isolation layer consists of an oxide layer adjacent to the semiconductor surface, a nitride layer on the oxide layer, and an oxide layer on the nitride layer in the final structure. This innovative design allows for fine control of the emitter depth in the underlying intrinsic base region.
Career Highlights
Janes H Comfort has had a distinguished career at the International Business Machines Corporation (IBM). His work has focused on enhancing semiconductor technologies, contributing to the advancement of electronic components that are crucial in modern devices. His patent reflects his expertise and commitment to innovation in the field.
Collaborations
Throughout his career, Janes has collaborated with notable colleagues, including Tze-Chiang Chen and Pong-Fei Lu. These collaborations have further enriched his work and contributed to the development of cutting-edge technologies in the semiconductor industry.
Conclusion
Janes H Comfort's contributions to the field of bipolar junction transistors exemplify his innovative spirit and dedication to advancing technology. His patent and collaborative efforts highlight the importance of continuous innovation in the semiconductor industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
