Jan L DeJong

Title: Jan L DeJong: Innovator in Static Memory Technology

Introduction

Jan L DeJong is a prominent inventor based in San Jose, California. She has made significant contributions to the field of memory technology, particularly in the development of static random access memory (SRAM). Her innovative approach has led to advancements that enhance the manufacturability and efficiency of memory cells.

Latest Patents

Jan L DeJong holds a patent for a "Static memory with self-aligned contacts and split word lines." This invention describes a compact SRAM design that utilizes both split word lines and self-aligned contacts. The self-aligned contacts between the gates of the pull-down transistors and cross-coupled interconnects reduce the critical spacing between cell elements, allowing for smaller and more manufacturable memory cells. The split word lines enable memory cell connections to be positioned on opposite sides, which decreases perpendicular separation between bit lines and enhances stability.

Career Highlights

Throughout her career, Jan has worked with Paradigm Technology, Inc., where she has focused on advancing memory technology. Her work has been instrumental in pushing the boundaries of what is possible in SRAM design. She has demonstrated a commitment to innovation and excellence in her field.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Jan L DeJong is a trailblazer in the field of static memory technology, with her innovative patent contributing to the advancement of SRAM design. Her work continues to influence the industry and pave the way for future innovations.