Jan Fuhrmann

Title: Jan Fuhrmann: Innovator in Semiconductor Technology

Introduction

Jan Fuhrmann is a notable inventor based in Rostock, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advancements that enhance the efficiency and functionality of semiconductor devices.

Latest Patents

Fuhrmann's latest patents include a semiconductor device with an insulated gate transistor cell and rectifying junction. This innovative device features an insulated gate transistor cell, a first region, a cathode region, a second region, and a source electrode. The design incorporates a silicon carbide body, ensuring that the source region and the cathode region are effectively connected. Another significant patent involves a method for operating a bipolar transistor with an insulated gate electrode. This method outlines the process of determining the maximum stationary reverse bias required for the operation of the IGBT, along with the necessary charge removals to optimize performance.

Career Highlights

Throughout his career, Jan Fuhrmann has worked with prominent companies in the semiconductor industry, including Infineon Technologies AG and Siemens Aktiengesellschaft. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Fuhrmann has collaborated with esteemed colleagues such as Thomas Basler and Hans-Guenter Eckel. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Jan Fuhrmann is a distinguished inventor whose work in semiconductor technology has led to several important patents. His contributions continue to influence the industry and pave the way for future innovations.