Goleta, CA, United States of America

Jan Arild Tofte


Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 95(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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3 patents (USPTO):Explore Patents

Title: Jan Arild Tofte: Innovator in Optical-Based Monitoring Technologies

Introduction

Jan Arild Tofte is a notable inventor based in Goleta, CA (US). He has made significant contributions to the field of optical-based monitoring technologies, holding a total of 3 patents. His work focuses on methods that enhance the precision of epitaxial growth processes.

Latest Patents

Tofte's latest patents include the "Integrated multi-channel optical-based flux monitor and method" and the "Method of controlling multi-species epitaxial deposition." The first patent describes an integrated dual beam multi-channel optical-based flux monitor that allows for the monitoring of atomic absorption of various atomic species during epitaxial growth. In this method, light from multiple sources is passed through a deposition region, where atomic absorption occurs. The light that passes through is then compared to light in a reference arm that did not pass through the absorption region, enabling careful control of the epitaxial layer growth. The second patent outlines a similar method for monitoring and controlling the deposition of an epitaxial layer, ensuring precision in the process.

Career Highlights

Throughout his career, Jan Arild Tofte has worked with esteemed institutions, including the University of California. His innovative approaches have significantly impacted the field of material science and engineering.

Collaborations

Tofte has collaborated with notable individuals such as Paul Ruengrit Pinsukanjana and Arthur Charles Gossard. These collaborations have further enriched his research and development efforts.

Conclusion

Jan Arild Tofte's contributions to optical-based monitoring technologies exemplify the importance of innovation in advancing scientific research. His patents reflect a commitment to enhancing the precision of epitaxial growth processes, making a lasting impact in the field.

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