Company Filing History:
Years Active: 2017
Title: Innovations of Jan A Petykiewicz
Introduction
Jan A Petykiewicz is an accomplished inventor based in Stanford, CA. He has made significant contributions to the field of semiconductor devices, particularly in the development of low-threshold germanium lasers. His innovative work has the potential to advance photonic technologies.
Latest Patents
Jan A Petykiewicz holds a patent for a "Crossed nanobeam structure for a low-threshold germanium laser." This patent describes a crossed nanobeam structure that facilitates strain engineering in semiconductor devices. The design allows for light confinement in a subwavelength volume with minimal optical loss. Additionally, the crossing nanobeam induces high tensile strain in the region where the optical mode is tightly confined. This combination of features reduces the required pumping to achieve net optical gain beyond cavity losses, making it possible to develop an extremely low-threshold Ge laser source. The structure is also easily integrable into electronic and photonic circuits.
Career Highlights
Jan A Petykiewicz is affiliated with Leland Stanford Junior University, where he continues to push the boundaries of research in semiconductor technology. His work has garnered attention for its innovative approach to laser technology.
Collaborations
Jan has collaborated with notable colleagues, including Donguk Nam and Devanand S Sukhdeo, who have contributed to his research endeavors.
Conclusion
Jan A Petykiewicz's contributions to the field of semiconductor devices and laser technology highlight his innovative spirit and dedication to advancing photonic applications. His work promises to have a lasting impact on the industry.