Turnhout, Belgium

Jan A J Stoffels

This inventor holds 1 USPTO granted patent. Top assignee: Koninklijke Philips Corporation N.v.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jan A J Stoffels. Retrieved from https://idiyas.com/inventor/jan-a-j-stoffels

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Jan A. J. Stoffels and High-Pressure Discharge Lamp Technology

Introduction

Jan A. J. Stoffels is an inventor associated with Turnhout, Belgium, and Koninklijke Philips Corporation N.V. His patent work includes a design for a ceramic, gas-tight high-pressure burner.

Latest Patents

Stoffels is credited with 1 patent: “High-pressure discharge lamp, and method of manufacture thereof.” The invention describes a burner containing an ionizable filling and a discharge vessel with a cavity volume ranging from 3 mm³ to 30 mm³. It specifies an internal filling pressure of 0.1 MPa to 4 MPa at room temperature. The burner’s end closure can use a one-, two-, or three-part design intended to reduce crevices.

Career Highlights

Stoffels’s listed patent reflects work on the construction and manufacture of high-pressure discharge lamps. The design addresses burner sealing, cavity dimensions, filling pressure, and end-closure configuration.

Collaborations

His listed coworkers include Josephus C. M. Hendricx and Jean-Sebastien Straetmans. The available information identifies these professional associations but does not specify their roles in the patent.

Conclusion

Jan A. J. Stoffels’s patent contribution focuses on a ceramic high-pressure burner design, with particular attention to its discharge cavity, operating pressure, and reduced-crevice end closure.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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