Olathe, KS, United States of America

Jamie Wilt

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: University of Kansas. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jamie Wilt. Retrieved from https://idiyas.com/inventor/jamie-wilt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Jamie Wilt - Innovator in Atomic Layer Deposition

Introduction

Jamie Wilt is a notable inventor based in Olathe, Kansas. He has made significant contributions to the field of materials science, particularly in the area of atomic layer deposition. His innovative work has led to the development of methods that enhance the formation of ultrathin tunnel barriers.

Latest Patents

Jamie Wilt holds a patent for "Atomic layer deposition of ultrathin tunnel barriers." This patent describes methods for forming tunnel barrier layers, including a technique that involves exposing a surface of a material, free of oxygen, to an initial water pulse. The process is designed to maximize hydroxylation of the surface, followed by exposure to alternating pulses of precursors to create a tunnel barrier layer with an average thickness of no more than 1 nm, all without an intervening interfacial layer.

Career Highlights

Jamie is affiliated with the University of Kansas, where he continues to advance research in his field. His work is characterized by a commitment to innovation and excellence in scientific research.

Collaborations

Some of his notable coworkers include Judy Zhihong Wu and Ryan Goul, who contribute to the collaborative environment that fosters innovation at the University of Kansas.

Conclusion

Jamie Wilt's contributions to atomic layer deposition exemplify the impact of innovative research in materials science. His work not only advances technology but also inspires future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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