This inventor holds 1 USPTO granted patent. Top assignee: United Kingdom Atomic Energy Authority. Active years: 1976.
Company Filing History:
Years Active: 1976
Title: Innovations of James William Jones in Silicon Nitride Conductivity
Introduction
James William Jones is a notable inventor based in Blewbury, GB. He has made significant contributions to the field of materials science, particularly in the area of silicon nitride. His innovative work has led to advancements in the electrical conductivity of silicon nitride artefacts.
Latest Patents
One of his key patents focuses on the conductivity of silicon nitride. The patent describes a method for producing an electrically conducting artefact by heating a silicon nitride artefact to a temperature that decomposes part of the silicon nitride into silicon. This process is carefully controlled to prevent the evaporation of the formed silicon. The heating can occur in an inert environment or in a carbon-containing environment, which reacts with the silicon to produce silicon carbide. This artefact exhibits electrical conductivity properties that can be retained even after being heated at approximately 600°C in air for several hours.
Career Highlights
James William Jones is associated with the United Kingdom Atomic Energy Authority, where he has been able to apply his expertise in materials science. His work has contributed to the understanding and development of materials with enhanced electrical properties.
Collaborations
He has collaborated with John W Henney, a fellow researcher, to further explore the applications and implications of their findings in the field of silicon nitride.
Conclusion
James William Jones's innovative work in the conductivity of silicon nitride has opened new avenues for research and application in materials science. His contributions continue to influence the development of advanced materials with unique electrical properties.