James V Di Lorenzo

Title: Innovations of James V Di Lorenzo

Introduction

James V Di Lorenzo is a notable inventor based in Millington, NJ (US). He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors.

Latest Patents

James V Di Lorenzo holds a patent for a method involving nonalloyed ohmic contacts to n-type Group III(a)-V(a) semiconductors. This patent describes a process where a nonalloyed ohmic contact is formed by epitaxially growing a Group III(a)-V(a) n.sup.++ -layer doped to at least 10.sup.19 cm.sup.-3 between the semiconductor body and a metal contact layer. The innovation allows for the formation of an ohmic contact without requiring heating above the eutectic temperature. Additionally, to prevent contamination of the metal-semiconductor interface, a metal contact layer may be deposited in situ after MBE growth of the n.sup.++ -layer. This technique results in a smoother morphology at the metal-semiconductor interface and an effective ohmic contact.

Career Highlights

James V Di Lorenzo has had a distinguished career at Bell Telephone Laboratories. His work has contributed to advancements in semiconductor technology, particularly in the fabrication of GaAs FETs. His innovative approaches have paved the way for improved semiconductor devices.

Collaborations

James has collaborated with notable colleagues such as Alfred Yi Cho and William Charles Niehaus. Their combined expertise has furthered research and development in the semiconductor field.

Conclusion

James V Di Lorenzo's contributions to semiconductor technology through his innovative patent and work at Bell Telephone Laboratories highlight his importance in the field. His advancements continue to influence the development of modern electronic devices.