Bethlehem, PA, United States of America

James Robert Lothian

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1997-1999

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4 patents (USPTO):Explore Patents

**Title: The Innovative Contributions of James Robert Lothian**

Introduction

James Robert Lothian, a distinguished inventor located in Bethlehem, PA, has made significant strides in the field of semiconductor technology. With a total of four patents to his name, Lothian has demonstrated remarkable ingenuity, particularly in developing methodologies that enhance the performance of electronic devices.

Latest Patents

Among his latest patents, Lothian has introduced a novel **Method of Forming a T-Shaped Gate**. This invention details innovative techniques for creating T-shaped metal gates for Schottky gate devices, including MESFETs and HEMTs. The method employs a bi-level photoresist technique to achieve a precise T-shaped feature in the gate structure. By evaporating metal into the photoresist and utilizing a lift-off process, unwanted metal is effectively removed, culminating in the formation of the T-shaped gate. A notable aspect of his work is the plasma treatment of the first patterned resist level, which fortifies the material against subsequent deposition processes.

Another significant contribution by Lothian is the article titled **Comprising an Oxide Layer on GaN**. In this patent, a high-quality oxide layer is formed on a GaN surface through meticulous preparation of the material. By ensuring that the surface is atomically clean and ordered, and exposing it to evaporant from a gallium gadolinium garnet (GGG) evaporation source, Lothian has enabled the development of MOS structures that demonstrate low leakage current, alongside effective charge accumulation and depletion.

Career Highlights

Lothian is currently employed at Lucent Technologies Inc., a leading company in the telecommunications industry. His role there has allowed him to leverage his patented technologies, contributing substantially to advancements in semiconductor devices.

Collaborations

Throughout his career, James Robert Lothian has collaborated with talented peers, including Fan Ren and Minghwei Hong. These partnerships have fostered a rich environment for innovation, enabling the team to push the boundaries of what is possible in their field.

Conclusion

James Robert Lothian's work exemplifies the spirit of innovation in the semiconductor industry. His patents reflect a deep understanding of material properties and device functionality, positioning him as a vital contributor to ongoing developments in electronic technology. As the industry continues to evolve, Lothian's inventions will undoubtedly play a critical role in shaping its future.

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