Clifton Park, NY, United States of America

James R Shealy

This inventor holds 2 USPTO granted patents. Top assignee: General Electric Company. Active years: 1981-1982.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James R Shealy. Retrieved from https://idiyas.com/inventor/james-r-shealy-cw43ajdt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 89(Granted Patents)


Company Filing History:


Years Active: 1981-1982

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2 patents (USPTO):Explore Patents

Title: James R. Shealy: Innovator in Semiconductor Technology

Introduction

James R. Shealy is a prominent inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced field effect transistors. With a total of 2 patents to his name, Shealy's work has had a lasting impact on high-frequency electronic devices.

Latest Patents

Shealy's latest patents include innovations in vertical channel field effect transistors. One of his notable inventions is an improved high-frequency GaAs FET that features a higher breakdown voltage, lower input gate capacitance, and reduced source or drain resistance. This design incorporates a preferentially etched groove structure that yields parallel trapezoidal semiconductor fingers, which are wider at the top than at the bottom. Each finger intersects a high resistivity, semi-insulating region, fabricated through high-energy particle bombardment.

Another significant patent is for a vertical field effect transistor with an enhanced gate and channel structure. This invention also utilizes a preferentially etched trapezoidal groove structure, creating parallel trapezoidal semiconductor fingers. The design allows for Schottky gates or junction gates to be fabricated within the grooves surrounding the elongated fingers. The narrow vertical conducting channels between the gates lead to a high blocking gain, providing more contact area at the top of the device.

Career Highlights

James R. Shealy has had a distinguished career at General Electric Company, where he has been instrumental in advancing semiconductor technologies. His innovative designs have contributed to the development of more efficient and reliable electronic components.

Collaborations

Throughout his career, Shealy has collaborated with notable colleagues, including Bantval J. Baliga and Wirojana Tantraporn. These collaborations have further enhanced the impact of his work in the semiconductor field.

Conclusion

James R. Shealy's contributions to semiconductor technology through his patents and work at General Electric Company highlight his role as a key innovator in the industry. His advancements in field effect transistors continue to influence the development of high-frequency electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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