Company Filing History:
Years Active: 1991
Title: The Innovations of James P. Vokac
Introduction
James P. Vokac is a notable inventor based in Santa Clara County, California. He has made significant contributions to the field of electronics, particularly in the development of high-speed junction field effect transistors. His work has implications for various applications in modern technology.
Latest Patents
James P. Vokac holds a patent for a high-speed junction field effect transistor designed for use in bipolar applications. This innovative device is formed in an epitaxial layer of one conductivity type and includes source and drain regions of opposite conductivity type interconnected by a thin channel region. The design features a thin surface layer of the one conductivity type over the channel region, with a highly conductive contact formed on the surface layer. This surface contact can consist of highly doped polycrystalline silicon material with a metal layer on top. The combination of the surface contact and the underlying epitaxial layer serves as gates for the field effect transistor, enhancing the speed of operation due to increased conductivity.
Career Highlights
James P. Vokac has had a successful career at Linear Technology Corporation, where he has contributed to various projects and innovations. His expertise in semiconductor technology has positioned him as a valuable asset to the company.
Collaborations
Throughout his career, Vokac has collaborated with notable colleagues, including Wadie N. Khadder and Robert C. Dobkin. These collaborations have fostered an environment of innovation and have led to advancements in their respective fields.
Conclusion
James P. Vokac's contributions to the field of electronics, particularly through his patent for a high-speed junction field effect transistor, highlight his role as an influential inventor. His work continues to impact the technology landscape, showcasing the importance of innovation in driving progress.