James M Pickett

Title: Innovations of James M. Pickett

Introduction

James M. Pickett is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of bipolar integrated technology, holding 2 patents that showcase his expertise and innovative spirit. His work primarily focuses on advancements in VLSI (Very Large Scale Integration) processes.

Latest Patents

James M. Pickett's latest patents include a VLSI triple-diffused polysilicon bipolar transistor structure. This invention involves a bipolar VLSI process that includes masking and patterning, implanting a P+ channel stop, and locally oxidizing a P-doped silicon substrate to define a collector region. The process also entails implanting an N-type collector and diffusing the implants. The device features are photolithographically defined, ensuring precise alignment and functionality. Another significant patent is the very large scale bipolar integrated circuit process, which also emphasizes the importance of self-alignment and precise feature definition along the collector region.

Career Highlights

James M. Pickett has been instrumental in advancing bipolar integrated technology through his work at Bipolar Integrated Technology, Inc. His innovative approaches have contributed to the development of efficient and effective semiconductor devices. His patents reflect a deep understanding of the complexities involved in bipolar VLSI processes.

Collaborations

James has collaborated with notable coworkers such as Stanley C. Perino and Ralph E. Rose. Their combined expertise has fostered an environment of innovation and creativity within the field.

Conclusion

James M. Pickett's contributions to bipolar integrated technology and his innovative patents highlight his role as a leading inventor in the semiconductor industry. His work continues to influence advancements in VLSI processes and transistor structures.