James Lisenby

Title: James Lisenby: Innovator in Vertical Bipolar Transistor Technology

Introduction

James Lisenby is a notable inventor based in Sherman, Texas. He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on vertical bipolar transistors. His expertise and creativity have led to advancements that enhance the performance and efficiency of electronic devices.

Latest Patents

James Lisenby holds a patent for a vertical bipolar transistor and a method of manufacture that includes two epitaxial layers and a buried layer. This invention provides a vertical bipolar transistor that may include, in one embodiment, a second epitaxial layer located over a first epitaxial layer. The second epitaxial layer features at least two dopant profiles, which contribute to the transistor's functionality. The vertical bipolar transistor may further include a collector, a base, and an emitter located over or within the second epitaxial layer.

Career Highlights

Lisenby is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. His work at Texas Instruments has allowed him to be at the forefront of technological advancements in electronic components. His patent reflects his commitment to innovation and excellence in engineering.

Collaborations

James Lisenby has collaborated with talented individuals such as ChunLiang Yeh and Darrel C Oglesby, Jr. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

James Lisenby is a distinguished inventor whose work on vertical bipolar transistors has made a significant impact in the field of semiconductor technology. His contributions continue to influence the design and manufacturing of electronic devices, showcasing the importance of innovation in modern technology.