This inventor holds 1 USPTO granted patent. Top assignee: Hughes Microelectronics Limited. Active years: 1988.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1988
Title: The Innovations of James L. West
Introduction
James L. West is a notable inventor based in Kirkcaldy, GB. He is recognized for his contributions to the field of semiconductor memories. His innovative work has led to the development of significant technologies that enhance the performance of electronic devices.
Latest Patents
James L. West holds a patent for an EEPROM with a metal-doped insulator. This invention involves insulating layers that are responsible for trapping electric charge in non-volatile semiconductor memories, such as FAMOS or MNOS. The insulating layer is typically silicon oxide doped with up to 10 atomic % of a first transition series metal. This advancement plays a crucial role in improving the efficiency and reliability of memory devices.
Career Highlights
West has made significant strides in his career, particularly through his work at Hughes Microelectronics Limited. His expertise in semiconductor technology has positioned him as a key figure in the industry. With a patent portfolio that includes 1 patent, he continues to influence the field of electronics.
Collaborations
Throughout his career, James L. West has collaborated with esteemed colleagues, including Alan E. Owen and Komanduri V. Krishna. These partnerships have fostered innovation and contributed to the advancement of technology in semiconductor applications.
Conclusion
James L. West's contributions to the field of semiconductor memories exemplify the impact of innovative thinking in technology. His work continues to inspire future advancements in electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile