This inventor holds 2 USPTO granted patents. Top assignee: Massachusetts Institute of Technology. Active years: 1992-1994.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992-1994
Title: Innovations of James Im in Silicon-on-Insulator Technology
Introduction
James Im is a notable inventor based in Cambridge, MA (US). He has made significant contributions to the field of silicon-on-insulator (SOI) technology. With a total of 2 patents, his work focuses on enhancing the quality of silicon films through innovative methods.
Latest Patents
James Im's latest patents include the "Enhanced Radiative Zone-Melting Recrystallization Method and Apparatus." This method provides a technique for zone-melting-recrystallization (ZMR) to produce high-quality, substantially subboundary-free silicon-on-insulator thin films. By utilizing controlled radiant heating of the silicon film, this technique allows for a much wider experimental parameter range, which significantly improves the uniformity of crystalline quality across the entire SOI film.
Career Highlights
James Im is affiliated with the Massachusetts Institute of Technology, where he continues to advance research in semiconductor technologies. His work has been instrumental in developing methods that enhance the performance and quality of silicon materials used in various applications.
Collaborations
James has collaborated with Chenson K Chen, contributing to the advancement of their shared research interests in silicon technology.
Conclusion
James Im's innovative approaches in the field of silicon-on-insulator technology have paved the way for improved semiconductor materials. His contributions are vital for the ongoing development of high-quality silicon films.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile