Arlington, TX, United States of America

James H McCurdy

This inventor holds 1 USPTO granted patent. Top assignee: Loral Vought Systems Corporation. Active years: 1995.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: James H McCurdy: Innovator in Semiconductor Technology

Introduction

James H McCurdy is a notable inventor based in Arlington, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the characterization of excess carrier lifetime in semiconductor materials.

Latest Patents

James H McCurdy holds a patent for a "Compact noncontact excess carrier lifetime characterization apparatus." This innovative apparatus is designed to measure the excess carrier lifetime in semiconductor materials, such as HgCdTe wafers. The device includes a computer controller that automates various functions, including the operation of a shutter to control exposure time to excitation energy from a laser. It also manages the laser energy intensity, the position of the wafer through a motorized sample positioner, and the temperature of the sample. The apparatus takes multiple samples, which are averaged and analyzed to provide a comprehensive characterization of the carrier lifetime.

Career Highlights

James H McCurdy is associated with Loral Vought Systems Corporation, where he has applied his expertise in semiconductor technology. His work has contributed to advancements in the field, particularly in the development of measurement apparatuses that enhance the understanding of semiconductor materials.

Collaborations

Some of his notable coworkers include Thomas A Shafer and Thomas R Schimert, who have collaborated with him on various projects within the semiconductor industry.

Conclusion

James H McCurdy's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the understanding and characterization of semiconductor materials.

Profile summary based on public USPTO records.
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