Allentown, PA, United States of America

James F Roberts

This inventor holds 1 USPTO granted patent. Top assignee: At&t Bell Laboratories. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James F Roberts. Retrieved from https://idiyas.com/inventor/james-f-roberts-m2p62kbf

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: The Innovations of James F. Roberts

Introduction

James F. Roberts is a notable inventor based in Allentown, PA. He has made significant contributions to the field of integrated circuit manufacturing. His work has led to advancements that enhance the quality and reliability of semiconductor devices.

Latest Patents

James F. Roberts holds a patent for a method of integrated circuit manufacturing using deposited oxide. This innovative approach reduces contamination of LPCVDBP TEOS films by preventing volatile compounds from reaching the deposition portion of the furnace. As a result, chemically generated particles that could contaminate the dielectric film are minimized.

Career Highlights

Roberts is associated with AT&T Bell Laboratories, a leading research and development organization. His work at this prestigious institution has allowed him to explore and develop cutting-edge technologies in the semiconductor industry.

Collaborations

Throughout his career, James F. Roberts has collaborated with esteemed colleagues such as Ajit S. Manocha and Virendra V. Rana. These partnerships have fostered an environment of innovation and have contributed to the success of various projects.

Conclusion

James F. Roberts is a distinguished inventor whose work in integrated circuit manufacturing has made a lasting impact on the technology sector. His contributions continue to influence advancements in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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