Company Filing History:
Years Active: 1996
Title: The Innovations of James E. Prendergast
Introduction
James E. Prendergast is a notable inventor based in Phoenix, Arizona. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the performance of electronic devices.
Latest Patents
One of his key patents is for an insulated gate semiconductor device and method of manufacture. This invention focuses on an insulated gate field effect transistor that features reduced gate to drain capacitance. The patent outlines a method of manufacturing this field effect transistor, which includes forming a dopant well in a semiconductor material. A gate oxide layer is created on the dopant well, and the design includes a gate structure with a gate contact portion and a gate extension portion. The thickening of a portion of the gate oxide adjacent to the gate contact portion is a critical aspect that lowers the gate to drain capacitance, thereby increasing the bandwidth of the device.
Career Highlights
James E. Prendergast has had a distinguished career at Motorola Corporation. His work at this leading technology company has allowed him to be at the forefront of semiconductor innovation. His contributions have been instrumental in developing more efficient electronic components.
Collaborations
Throughout his career, Prendergast has collaborated with notable colleagues, including Robert Bruce Davies and Vida Ilderem. These collaborations have fostered an environment of innovation and have led to significant advancements in their respective fields.
Conclusion
James E. Prendergast's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patented inventions continue to influence the development of advanced electronic devices.