The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 30, 1996
Filed:
Mar. 21, 1995
Robert B Davies, Tempe, AZ (US);
Vida Ilderem, Phoenix, AZ (US);
Mark D Griswold, Chandler, AZ (US);
Diann Dow, Chandler, AZ (US);
James E Prendergast, Phoenix, AZ (US);
Iksung Lim, Tempe, AZ (US);
Juan Buxo, Mesa, AZ (US);
Richard D Sivan, Austin, TX (US);
James D Burnett, Austin, TX (US);
Frank K Baker, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An insulated gate field effect transistor (10) having an reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor material (11). A gate oxide layer (26) is formed on the dopant well (13) wherein the gate oxide layer (26) and a gate structure (41) having a gate contact portion (43) and a gate extension portion (44). The gate contact portion (43) permits electrical contact to the gate structure (41), whereas the gate extension portion (44) serves as the active gate portion. A portion of the gate oxide (26) adjacent the gate contact portion (43) is thickened to lower a gate to drain capacitance of the field effect transistor (10) and thereby increase a bandwidth of the insulated gate field effect transistor (10).