James D Guillory

Title: James D. Guillory: Innovator in Thin Film Transistor Technology

Introduction

James D. Guillory is a notable inventor based in Athens, TX (US). He has made significant contributions to the field of electronics, particularly in the development of thin film transistors. His innovative work has led to the granting of a patent that showcases his expertise and creativity in this area.

Latest Patents

James D. Guillory holds a patent for a Horizontal Structure Thin Film Transistor. This invention involves the fabrication of a horizontal structure transistor in a shallow epitaxial island that is completely surrounded by an insulator, such as oxide. The design features base and emitter regions that are diffused into the island from the same mask, allowing for a controllable and constant base width in relation to the emitter. Additionally, a polysilicon base contact is placed on top of the island, isolated from the emitter and collector regions by an oxide layer. This innovative transistor design can be easily fabricated to include complementary bipolar transistors and complementary IGFET devices on the same substrate.

Career Highlights

James D. Guillory is associated with Texas Instruments Corporation, a leading company in the field of electronics and semiconductor technology. His work at Texas Instruments has allowed him to contribute to advancements in electronic components and systems.

Collaborations

Throughout his career, James has collaborated with notable colleagues, including Eldon J. Zorinsky and David B. Spratt. These collaborations have further enriched his work and contributed to the development of innovative technologies.

Conclusion

James D. Guillory's contributions to the field of thin film transistors exemplify his innovative spirit and technical expertise. His patent for the Horizontal Structure Thin Film Transistor represents a significant advancement in electronics, showcasing the potential for future developments in this area.