logo

For the Inventor, By the Inventor

Dallas, TX, United States of America

James D Gallia

USPTO Granted Patents = 12

Average Co-Inventor Count = 2.4

ph-index = 7

Forward Citations = 236(Granted Patents)


Location History:

  • Dallas, TX (US) (1986 - 2004)
  • McKinney, TX (US) (2003 - 2009)

Company Filing History:

goldMedal12 out of 29,297 
 
Texas Instruments Corporation
 patents

Years Active: 1986-2009

Loading Chart...
12 patents (USPTO):Explore Patents
1. 7638412 - Method and system for reducing charge damage in silicon-on-insulator technology (2009-12-29),
2. 7262468 - Method and system for reducing charge damage in silicon-on-insulator technology (2007-08-28),
3. 6870375 - System and method for measuring a capacitance associated with an integrated circuit (2005-03-22),
4. 6708303 - Method and apparatus for controlling a seperate scan output of a scan circuit (2004-03-16),
5. 6563158 - Method and apparatus for voltage stiffening in an integrated circuit (2003-05-13),
6. 5173623 - High performance BiCMOS logic circuits with full output voltage swing up (1992-12-22),
7. 5126973 - Redundancy scheme for eliminating defects in a memory device (1992-06-30),
8. 5107147 - Base cell for semi-custom circuit with merged technology (1992-04-21),
9. 5019888 - Circuit to improve electrostatic discharge protection (1991-05-28),
10. 4723228 - Memory decoding circuit (1988-02-02),
11. 4604727 - Memory with configuration RAM (1986-08-05),
12. 4601019 - Memory with redundancy (1986-07-15),

Title: James D. Gallia: Innovator in Silicon-on-Insulator Technology

Introduction

James D. Gallia is a prominent inventor based in Dallas, TX (US), known for his significant contributions to silicon-on-insulator technology. With a total of 12 patents to his name, Gallia has made remarkable advancements in the field of semiconductor devices.

Latest Patents

One of Gallia's latest patents is a method and system for reducing charge damage in silicon-on-insulator technology. According to one embodiment of the invention, a silicon-on-insulator device includes an insulative layer formed overlying a substrate and a source and drain region formed overlying the insulative layer. The source region and the drain region comprise a material having a first conductivity type. A body region is disposed between the source region and the drain region and overlying the insulative layer. The body region comprises a material having a second conductivity type. A gate insulative layer overlies the body region. This device also includes a gate region overlying the gate insulative layer. Additionally, the device includes a diode circuit conductively coupled to the source region and a conductive connection coupling the gate region to the diode circuit.

Career Highlights

Gallia is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His work has significantly impacted the semiconductor industry, particularly in enhancing the performance and reliability of silicon-on-insulator devices.

Collaborations

Throughout his career, Gallia has collaborated with notable colleagues, including Ashwin H. Shah and Shivaling S. Mahant-Shetti. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

James D. Gallia's contributions to silicon-on-insulator technology and his ongoing work at Texas Instruments Corporation highlight his role as a leading inventor in the semiconductor industry. His innovative spirit and dedication to research continue to drive advancements in technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…