The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 28, 2007

Filed:

Dec. 28, 2001
Applicants:

James D. Gallia, McKinney, TX (US);

Srikanth Krishnan, Richardson, TX (US);

Anand T. Krishnan, Richardson, TX (US);

Inventors:

James D. Gallia, McKinney, TX (US);

Srikanth Krishnan, Richardson, TX (US);

Anand T. Krishnan, Richardson, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 27/01 (2006.01); H01L 27/02 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment of the invention, a silicon-on-insulator device includes an insulative layer formed overlying a substrate and a source and drain region formed overlying the insulative layer. The source region and the drain region comprise a material having a first conductivity type. A body region is disposed between the source region and the drain region and overlying the insulative layer. The body region comprises a material having a second conductivity type. A gate insulative layer overlies the body region. This device also includes a gate region overlying the gate insulative layer. The device also includes a diode circuit conductively coupled to the source region and a conductive connection coupling the gate region to the diode circuit.


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