Company Filing History:
Years Active: 2002
Title: Innovations of Jakub Tadeusz Kedzierski
Introduction
Jakub Tadeusz Kedzierski is a notable inventor based in Hayward, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of FinFET devices. His work has implications for enhancing the performance of transistors used in various electronic applications.
Latest Patents
Kedzierski holds a patent for "Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture." This innovative FinFET device is fabricated using conventional planar MOSFET technology. The device is constructed in a silicon layer over an insulating layer, such as SIMOX, with the device extending from the insulating layer as a fin. The design includes double gates over the sides of the channel, which enhances drive current and effectively suppresses short channel effects. Additionally, a plurality of channels can be provided between a source and a drain to increase current capacity. In one embodiment, two transistors can be stacked in a fin to create a CMOS transistor pair with a shared gate. Kedzierski has 1 patent to his name.
Career Highlights
Kedzierski is affiliated with the University of California, where he continues to engage in research and development in semiconductor technologies. His work has been instrumental in advancing the understanding and application of FinFET devices in modern electronics.
Collaborations
Kedzierski has collaborated with esteemed colleagues such as Chenming Hu and Tsu-Jae King. Their combined expertise has contributed to the advancement of semiconductor technology and innovation.
Conclusion
Jakub Tadeusz Kedzierski is a prominent inventor whose work in FinFET technology has the potential to revolutionize the semiconductor industry. His contributions are vital for the future of electronic devices, showcasing the importance of innovation in technology.