Jainhai Qi

Title: Jainhai Qi: Innovator in Trench MIS Device Technology

Introduction

Jainhai Qi is a prominent inventor based in San Jose, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of trench MIS devices. With a total of 5 patents to his name, his work has advanced the efficiency and performance of electronic devices.

Latest Patents

One of Jainhai Qi's latest patents is focused on a trench MIS device that is formed in a P-epitaxial layer over an N-epitaxial layer and an N+ substrate. This innovative device includes an N-type drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. The design incorporates spacers on the sidewalls of the trench, allowing for the implantation of an N-type dopant, which enhances the device's low on-resistance. Additionally, the device features polysilicon-filled termination trenches that improve its performance.

Another notable patent involves a process for manufacturing a trench MIS device with an implanted drain-drift region and a thick bottom oxide layer. This thick insulating layer reduces capacitance between the gate and the drain, enabling the device to operate effectively at high frequencies. The N-epitaxial layer in this design increases the breakdown voltage, further enhancing the device's capabilities.

Career Highlights

Jainhai Qi is currently employed at Siliconix Incorporated, where he continues to innovate in the semiconductor industry. His work has been instrumental in developing technologies that improve the performance of electronic components.

Collaborations

Jainhai has collaborated with notable colleagues, including Mohamed N Darwish and Kyle Terrill, contributing to advancements in their shared field of expertise.

Conclusion

Jainhai Qi's contributions to trench MIS device technology exemplify his commitment to innovation in the semiconductor industry. His patents reflect a deep understanding of electronic device performance and efficiency.