Lawrence, KS, United States of America

Jagaran Acharya

This inventor holds 1 USPTO granted patent. Top assignee: University of Kansas. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jagaran Acharya. Retrieved from https://idiyas.com/inventor/jagaran-acharya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Jagaran Acharya: Innovator in Atomic Layer Deposition

Introduction

Jagaran Acharya is a notable inventor based in Lawrence, KS (US). He has made significant contributions to the field of materials science, particularly in the area of atomic layer deposition.

Latest Patents

Acharya holds a patent for "Atomic layer deposition of ultrathin tunnel barriers." This innovative method involves exposing a surface of a material, free of oxygen, to an initial water pulse for a specific pulse time and temperature. The process is designed to maximize hydroxylation of the surface. Following this, the hydroxylated surface is treated with alternating pulses of precursors, inducing reactions that form a tunnel barrier layer with an average thickness of no more than 1 nm. This layer is created without an intervening interfacial layer, showcasing Acharya's expertise in atomic layer deposition (ALD).

Career Highlights

Acharya is affiliated with the University of Kansas, where he continues to advance research in his field. His work has garnered attention for its potential applications in various technological domains.

Collaborations

Some of his notable coworkers include Judy Zhihong Wu and Jamie Wilt, who contribute to the collaborative research environment at the University of Kansas.

Conclusion

Jagaran Acharya's innovative work in atomic layer deposition exemplifies the impact of research on advancing technology. His contributions are paving the way for future developments in materials science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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