Bucheon-si, South Korea

Jaehyun Yeo


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Jaehyun Yeo: Innovator in Semiconductor Technology

Introduction

Jaehyun Yeo is a prominent inventor based in Bucheon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent work. His expertise and dedication to advancing technology have positioned him as a key figure in the industry.

Latest Patents

Jaehyun Yeo holds a patent for "Semiconductor devices having a silicon-germanium channel layer and methods of forming the same." This patent outlines methods for creating semiconductor devices that include a silicon-germanium channel layer. The methods involve forming this channel layer on a substrate in a peripheral circuit region, followed by the sequential formation of a first insulating layer and a second insulating layer. Additionally, the patent describes the formation of a conductive layer on the substrate, which encompasses both a cell array region and the peripheral circuit region. The conductive layer is then patterned to create a conductive line in the cell array region and a gate electrode in the peripheral circuit region. Notably, the first insulating layer is formed at a first temperature, while the second insulating layer is formed at a higher second temperature.

Career Highlights

Jaehyun Yeo is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to semiconductor technology.

Collaborations

Some of Jaehyun Yeo's notable coworkers include Youngkuk Kim and Ho-Kyun An. Their collaborative efforts have played a significant role in advancing the projects they work on together.

Conclusion

Jaehyun Yeo's innovative work in semiconductor technology, particularly through his patent on silicon-germanium channel layers, showcases his commitment to advancing the field. His contributions at Samsung Electronics Co., Ltd. and collaborations with fellow professionals highlight his importance in the industry.

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