Dongjak, South Korea

Jae-Yeong Do


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: The Innovative Mind of Jae-Yeong Do

Introduction

Jae-Yeong Do, an accomplished inventor based in Dongjak, South Korea, has made significant contributions to the field of semiconductor technology. His innovative spirit is evident in his patented invention, which aims to enhance the reliability of semiconductor memory devices.

Latest Patents

Jae-Yeong Do holds a patent for a "Redundancy Circuit for Use in a Semiconductor Memory Device." This innovation features a normal decoder and a redundant decoder equipped with address program devices that facilitate the replacement of defective cells in memory arrays. The design incorporates an additional program device that offers complementary input signals, enhancing the redundancy and reliability of the memory system. The program device uses a four-cell FLOTOX type nonvolatile memory element to effectively repair faulty memory cells through a two-step programming process.

Career Highlights

Currently, Jae-Yeong Do is associated with Samsung Semiconductor & Telecommunication Co., Ltd., a leading player in the semiconductor industry. His work focuses on improving semiconductor components and advancing memory technologies, which are critical for modern electronic devices.

Collaborations

During his tenure at Samsung, Jae-Yeong Do has collaborated with notable colleagues, including Hyung-Kyu Lim and Rustam J Mehta. Together, they have contributed to various projects that push the boundaries of technology, fostering innovation within the company.

Conclusion

Jae-Yeong Do's inventive contributions are vital to the advancement of semiconductor memory technologies. His patent reflects not just his technical prowess but also his commitment to improving the reliability of electronic devices. As he continues his work at Samsung, the impact of his innovations will undoubtedly shape the future of memory devices and beyond.

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