Jae Woo Shim

Title: Innovations by Jae Woo Shim in Semiconductor Technology.

Introduction

Jae Woo Shim is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

Jae Woo Shim holds a patent for a method of healing defects at junctions of semiconductor devices using germanium. This innovative method involves several steps, including growing a p-Ge layer on a substrate, performing ion implantation or in-situ doping, and etching to form an n+ Ge region. The process also includes depositing an oxide film, patterning, and annealing at temperatures between 600°C and 700°C for 1 to 3 hours. This annealing process effectively heals Ge defects at n+/p junctions, reduces the depth of junctions, minimizes leakage current, and ultimately improves the properties of semiconductor devices, achieving high integration and fineness.

Career Highlights

Throughout his career, Jae Woo Shim has worked with prominent institutions such as the Korea Advanced Nano Fab Center and Sungkyunkwan University. His work in these organizations has allowed him to collaborate with other experts in the field and contribute to advancements in semiconductor technology.

Collaborations

One of his notable collaborators is Jong Gon Heo. Their partnership has likely fostered innovative ideas and solutions in the semiconductor sector.

Conclusion

Jae Woo Shim's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work not only addresses critical challenges in semiconductor device performance but also paves the way for future innovations.