Jae Un Lee

Title: Jae Un Lee: Innovator in Gallium Nitride Substrate Fabrication

Introduction

Jae Un Lee is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of gallium nitride substrates. His innovative approach has the potential to enhance the performance of electronic devices.

Latest Patents

Jae Un Lee holds a patent for a "Method of fabricating gallium nitride substrate using ion implantation." This invention relates to a technology that utilizes an ion implantation process combined with a self-separation technique. The method involves several steps, including the formation of a first gallium nitride layer on a substrate, implanting hydrogen ions to create a separation layer, grinding the edges of the substrate, and forming a second gallium nitride layer. The process culminates in the self-separation of the second layer from the first, showcasing a novel approach to substrate fabrication.

Career Highlights

Jae Un Lee is affiliated with the Industry-University Cooperation Foundation at Hanyang University. His work in this institution has allowed him to collaborate with other experts in the field and contribute to advancements in semiconductor technology. His dedication to research and innovation has positioned him as a key figure in his area of expertise.

Collaborations

Some of Jae Un Lee's notable coworkers include Jea Gun Park and Tae Hun Shim. Their collaborative efforts have furthered research and development in the field of gallium nitride substrates.

Conclusion

Jae Un Lee's contributions to the fabrication of gallium nitride substrates highlight his innovative spirit and commitment to advancing semiconductor technology. His patent and collaborative work reflect the importance of research in driving technological progress.