Company Filing History:
Years Active: 2022-2025
Title: Innovations of Jae Seok Heo
Introduction
Jae Seok Heo is an accomplished inventor based in Dublin, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of barrier layers and thin films for nonvolatile memory devices. With a total of 4 patents to his name, Heo continues to push the boundaries of innovation in his field.
Latest Patents
One of his latest patents is focused on a titanium silicon nitride barrier layer. This technology relates to a barrier layer comprising titanium silicon nitride, specifically designed for nonvolatile memory devices. The method involves forming an electrode for a phase change memory device by utilizing titanium silicon nitride (TiSiN) on a phase change storage element. The process includes exposing a semiconductor substrate to cyclical vapor deposition cycles, which consist of exposures to titanium, nitrogen, and silicon precursors.
Another notable patent involves the formation of conformal titanium nitride-based thin films. This technology aims to create smooth and conformal titanium nitride-based thin films. The method includes exposing a semiconductor substrate to vapor deposition cycles at a pressure greater than 1 torr, incorporating titanium, nitrogen, and either silicon or aluminum precursors.
Career Highlights
Jae Seok Heo is currently employed at Eugenus, Inc., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.
Collaborations
Heo collaborates with talented individuals such as Jerry Mack and Somilkumar J Rathi, who contribute to the innovative environment at Eugenus, Inc. Their combined efforts foster a culture of creativity and technological advancement.
Conclusion
Jae Seok Heo's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced memory devices, showcasing the importance of innovation in technology.