The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2022
Filed:
Oct. 08, 2019
Eugenus, Inc., San Jose, CA (US);
Niloy Mukherjee, San Ramon, CA (US);
Hae Young Kim, San Jose, CA (US);
Jerry Mack, San Jose, CA (US);
Jae Seok Heo, Dublin, CA (US);
Sung-Hoon Jung, Santa Clara, CA (US);
Somilkumar J. Rathi, San Jose, CA (US);
Srishti Chugh, San Jose, CA (US);
Nariman Naghibolashrafi, San Jose, CA (US);
Yoshikazu Okuyama, Santa Cruz, CA (US);
Bunsen B. Nie, Fremont, CA (US);
Eugenus, Inc., San Jose, CA (US);
Abstract
The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.