Ahnsan, South Korea

Jae-Neung Lee

This inventor holds 10 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2014-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jae-Neung Lee. Retrieved from https://idiyas.com/inventor/jae-neung-lee-dz71ibdh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 6

Forward Citations = 229(Granted Patents)


Location History:

  • Ansan-si, KR (2014 - 2017)
  • Ahnsan-Si, KR (2014 - 2017)
  • Suwon-si, KR (2022 - 2023)

Company Filing History:


Years Active: 2014-2023

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10 patents (USPTO):Explore Patents

Title: The Innovative Journey of Inventor Jae-Neung Lee

Introduction: Jae-Neung Lee, a pioneering inventor hailing from Ahnsan-si, South Korea, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Jae-Neung Lee holds several patents in the realm of electronics and telecommunications, showcasing his continuous dedication to pushing the boundaries of innovation.

Career Highlights: Throughout his illustrious career, Jae-Neung Lee has been at the forefront of developing cutting-edge technologies that have revolutionized the industry. His keen eye for detail and inventive spirit have led to the creation of products that have enhanced the lives of many.

Collaborations: Jae-Neung Lee has collaborated with leading tech companies and research institutions to further his inventions and bring them to the market. His ability to work in multidisciplinary teams has resulted in the successful implementation of his ideas.

Conclusion: In conclusion, Jae-Neung Lee stands as a beacon of innovation in the technological landscape, with a remarkable track record of pioneering inventions that have left an indelible mark on the industry. His relentless pursuit of excellence and passion for innovation continue to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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