Jae Gu Lim

Title: Jae Gu Lim: Innovator in Semiconductor Technology

Introduction

Jae Gu Lim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that showcases his expertise and creativity.

Latest Patents

Jae Gu Lim holds a patent for a semiconductor device. This device comprises a semiconductor structure that includes a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer positioned between the two conductive layers. The first conductive semiconductor layer features a super lattice layer made up of alternating first and second sub layers. The semiconductor structure is designed to emit ions of indium, aluminum, and specific dopants during primary ion irradiation. Notably, the device exhibits a maximum indium intensity peak and a maximum concentration peak for the first dopant, which are strategically spaced apart. The invention also includes multiple indium intensity peaks and concentration peaks within the first sub layers, enhancing its functionality.

Career Highlights

Jae Gu Lim is currently associated with Suzhou Lekin Semiconductor Co., Ltd. His role at the company allows him to further explore and develop innovative semiconductor technologies. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Jae Gu Lim collaborates with Ha Jong Bong, a fellow innovator in the semiconductor field. Their partnership has fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Jae Gu Lim's contributions to semiconductor technology exemplify his dedication to innovation. His patent for a semiconductor device highlights his ability to push the boundaries of technology. As he continues to work with Suzhou Lekin Semiconductor Co., Ltd., his future endeavors are anticipated to further impact the industry.