This inventor holds 2 USPTO granted patents. Top assignee: Sgs-Thomson Microelectronics S.a.. Active years: 1995.
Company Filing History:
Years Active: 1995
Title: Jacques Le Menn: Innovator in Avalanche Diode Technology
Introduction
Jacques Le Menn is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, particularly in the development of avalanche diodes. With a total of 2 patents to his name, Le Menn's work has had a lasting impact on integrated circuit design.
Latest Patents
Le Menn's latest patents focus on the incorporation of avalanche diodes within bipolar integrated circuits. One of his key innovations involves a reference diode formed in an N-type insulated well. This avalanche diode features a P-type deep region with a high doping level, beneath which lies an N-type overlapping buried layer. Additionally, it includes a P-type deep diffused region that contacts the central portion of the deep region, along with a second P-type deep diffused region that contacts the periphery. An N-type highly doped surface region coats the surface of the first deep diffused region, forming an avalanche junction. Another structure, identical to the avalanche diode structure but without the N-type surface region, serves as a resistor between its electrodes.
Career Highlights
Jacques Le Menn has been associated with Sgs-Thomson Microelectronics S.A., where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key player in the industry.
Collaborations
Le Menn has worked alongside Gerard Le Roux, collaborating on projects that enhance the functionality and efficiency of semiconductor devices.
Conclusion
Jacques Le Menn's contributions to avalanche diode technology exemplify his innovative spirit and dedication to advancing semiconductor design. His patents continue to influence the field, showcasing the importance of his work in modern electronics.