Company Filing History:
Years Active: 1991
Title: Jacob G DeGroot: Innovator in Transistor Manufacturing
Introduction
Jacob G DeGroot is a notable inventor based in Malden, Netherlands. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing processes of transistors. His innovative approach has led to advancements that enhance the performance and reliability of electronic devices.
Latest Patents
Jacob G DeGroot holds a patent for a "Transistor manufacturing process using three-step base doping." This patent describes a fabrication process that utilizes a three-step base doping technique. This method allows for the controllable reproduction of the characteristics of a vertical bipolar transistor at highly optimal values from run to run. The process incorporates insulating spacers to form a self-aligned base contact zone. Additionally, a shallow emitter is created through outdiffusion from a patterned non-monocrystalline semiconductor layer that serves as the emitter contact. This fabrication process is also compatible with the simultaneous manufacture of an insulated-gate field-effect transistor of the lightly doped drain type. Jacob G DeGroot has 1 patent to his name.
Career Highlights
Jacob G DeGroot has worked with North American Philips Corporation, specifically in the Signetics Division. His role in this esteemed company has allowed him to apply his innovative ideas and contribute to the advancement of semiconductor technology. His work has been instrumental in developing processes that improve the efficiency and effectiveness of transistor manufacturing.
Collaborations
Due to space constraints, the collaborations section will be omitted.
Conclusion
Jacob G DeGroot is a pioneering inventor whose work in transistor manufacturing has made a lasting impact on the field of electronics. His innovative techniques continue to influence the development of advanced semiconductor technologies.