Nijmegen, Netherlands

Jacob Antonius Van Der Pol


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Jacob Antonius Van Der Pol: Innovator in Power Circuit Technology

Introduction

Jacob Antonius Van Der Pol is a notable inventor based in Nijmegen, Netherlands. He has made significant contributions to the field of power circuit technology. His innovative work has led to the development of a patented integrated half-bridge power circuit.

Latest Patents

Van Der Pol holds a patent for an integrated half-bridge power circuit. This down converter includes an integrated circuit that features a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and both the conductivity-type of the LDMOS FET and the substrate are of the same type. This innovation enhances the efficiency and performance of power conversion systems.

Career Highlights

Jacob Antonius Van Der Pol is associated with NXP B.V., a leading company in the semiconductor industry. His work at NXP B.V. has allowed him to focus on advancing power circuit technologies. His contributions have been instrumental in developing efficient solutions for various applications.

Collaborations

Throughout his career, Van Der Pol has collaborated with esteemed colleagues such as Adrianus W Ludikhuize and Raymond J Grover. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Jacob Antonius Van Der Pol is a distinguished inventor whose work in power circuit technology has made a lasting impact. His patent for the integrated half-bridge power circuit exemplifies his commitment to innovation in the field. His collaborations and career at NXP B.V. further highlight his contributions to advancing technology.

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