J Ung Lee

Title: J Ung Lee: Innovator in Field Effect Transistors

Introduction

J Ung Lee is a notable inventor based in Cohoes, NY (US). He has made significant contributions to the field of electronics, particularly in the development of field effect transistors and related technologies. His innovative work has led to the granting of a patent that showcases his expertise and creativity in this area.

Latest Patents

J Ung Lee holds a patent for field effect transistors, field emission apparatuses, and thin film transistors. The invention includes a field effect transistor that features a semiconductive layer designed to form a channel region. It also incorporates a pair of spaced conductively doped semiconductive regions that are in electrical connection with the channel region. A gate is positioned between the semiconductive regions, along with a gate dielectric layer that aligns the gate with the channel region. Notably, the invention employs chemical-mechanical polishing to self-align the gate with the channel region. Additionally, the field emission device is configured to control the emission of electrons from an emitter.

Career Highlights

J Ung Lee is associated with Micron Technology Incorporated, where he continues to contribute to advancements in semiconductor technology. His work has been instrumental in enhancing the performance and efficiency of electronic devices.

Collaborations

He has collaborated with notable colleagues, including John K Lee and Benham Moradi, who share a commitment to innovation in the field of electronics.

Conclusion

J Ung Lee's contributions to the field of field effect transistors and related technologies highlight his role as a significant inventor. His patent reflects a deep understanding of semiconductor design and innovation.