Company Filing History:
Years Active: 1989
Title: J R Anderson: Innovator in Photodiode Technology
Introduction
J R Anderson is a notable inventor based in Hyattsville, MD (US). He has made significant contributions to the field of semiconductors, particularly in the development of photodiodes. His innovative work has led to the creation of a unique device that enhances light detection capabilities.
Latest Patents
J R Anderson holds a patent for the HgMnCdTe avalanche photodiode. This semiconducting photodiode is designed for detecting light at a predetermined wavelength. It features a first semiconducting region that is a quaternary alloy of mercury (Hg), manganese (Mn), cadmium (Cd), and tellurium (Te). The second semiconducting region electrically contacts the first, forming a semiconducting junction. The specific proportions of Hg, Mn, and Cd in the first region are carefully selected to ensure that the bandgap energy aligns with the spin orbit splitting energy at the desired wavelength. This innovation represents a significant advancement in photodiode technology.
Career Highlights
J R Anderson is associated with Rockwell International Corporation, where he has applied his expertise in semiconductor technology. His work has contributed to the advancement of various electronic devices and systems.
Collaborations
He has collaborated with notable colleagues, including Soo H Shin and John G Pasko, to further enhance the development of innovative technologies in the field.
Conclusion
J R Anderson's contributions to the field of photodiodes exemplify his commitment to innovation and technological advancement. His work continues to influence the development of advanced semiconductor devices.