J M Kuo

Title: Innovations of J M Kuo in Semiconductor Technology

Introduction

J M Kuo is a notable inventor based in Edison, NJ, who has made significant contributions to the field of semiconductor technology. With a focus on enhancing the performance of semiconductor devices, Kuo has developed innovative processes that address critical challenges in doping procedures.

Latest Patents

Kuo holds a patent for "Doping procedures for semiconductor devices." This patent describes a process for creating semiconductor devices with highly controlled doping profiles. The process minimizes or eliminates segregation effects caused by surface electric fields created by Fermi-level pinning. These electric fields influence dopant ions, causing them to migrate from their original deposition sites. Kuo's method effectively shields dopant ions from these electric fields through the illumination of growth surfaces and background doping. Additionally, certain crystallographic directions in specific semiconductors do not exhibit Fermi-level pinning, and lower growth temperatures can retard or eliminate segregation effects. The devices resulting from this innovative process demonstrate enhanced characteristics with highly accurate and narrow doping profiles.

Career Highlights

Kuo has worked at AT&T Bell Laboratories, a leading research institution known for its advancements in telecommunications and technology. His work at this prestigious organization has allowed him to contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Kuo has collaborated with esteemed colleagues, including Rose F Kopf and Henry S Luftman, who have also made significant contributions to the field of semiconductor research.

Conclusion

J M Kuo's innovative work in doping procedures for semiconductor devices showcases his expertise and commitment to advancing technology. His contributions have the potential to significantly impact the performance and efficiency of semiconductor devices in various applications.