This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Northrop Grumman Systems Corporation. Active years: 1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999
Title: J Donald Gardner, Jr: Innovator in High Power Electronic Devices
Introduction
J Donald Gardner, Jr. is a notable inventor based in Columbia, MD (US). He has made significant contributions to the field of high power electronic devices. His innovative work has led to the development of a unique substrate carrier that enhances the performance of semiconductor devices.
Latest Patents
Gardner holds a patent for a "Composite substrate carrier for high power electronic devices." This invention involves a substrate carrier designed for a ceramic substrate that supports one or more high power semiconductor devices. The carrier is fabricated from a metal base composite and includes strategically located high conductivity copper-based inserts. These inserts provide an effective heat transfer path to a heat sink, which is crucial for high power electronic devices. The coefficient of thermal expansion of both the metal-based composite and the copper-based inserts is designed to match that of the substrate. The substrate carrier is formed through a pressure casting process, where a porous preform of SiC is infiltrated with molten aluminum. Gardner's innovative approach addresses critical thermal management issues in high power electronics.
Career Highlights
Gardner is associated with Northrop Grumman Systems Corporation, where he has contributed to various projects related to electronic devices. His work has been instrumental in advancing technologies that require efficient thermal management solutions.
Collaborations
Throughout his career, Gardner has collaborated with esteemed colleagues, including Mehmet N Gungor and William R Larimer. These collaborations have further enriched his contributions to the field of high power electronics.
Conclusion
J Donald Gardner, Jr. is a distinguished inventor whose work in developing a composite substrate carrier has made a significant impact on high power electronic devices. His innovative solutions continue to influence the industry and enhance the performance of semiconductor technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile