Location History:
- Tokyo, JA (1976 - 1978)
- Tokyo, JP (1978 - 1981)
Company Filing History:
Years Active: 1976-1981
Title: Izuo Hayashi: Innovator in Semiconductor Laser Technology
Introduction
Izuo Hayashi is a prominent inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor laser technology. With a total of six patents to his name, Hayashi has made remarkable advancements that have influenced the development of laser devices.
Latest Patents
One of Hayashi's latest patents is the injection-type semiconductor laser. This innovative device features a double heterostructure configuration, which includes a light waveguide layer extending between a pair of mirrors. The design incorporates a thin active layer shaped like a stripe, approximately 5 micrometers wide, with its ends spaced from the mirrors by a distance of 30 to 60 micrometers. Another notable patent is for a semiconductor laser device that utilizes a stripe geometry buried double heterostructure. In this design, a first semiconductor layer is sandwiched between second and third layers with a wider band gap, enhancing the efficiency of laser oscillation.
Career Highlights
Throughout his career, Izuo Hayashi has worked with esteemed companies such as Nippon Electric Co., Ltd. and Nippon Selfoc Co., Ltd. His work in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.
Collaborations
Hayashi has collaborated with notable colleagues, including Hiroo Yonezu and Yasuo Nannichi. These partnerships have fostered a creative environment that has led to the development of advanced technologies in the semiconductor field.
Conclusion
Izuo Hayashi's contributions to semiconductor laser technology have established him as a key figure in the industry. His innovative patents and collaborations reflect his commitment to advancing technology and enhancing the capabilities of laser devices.