The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1976
Filed:
Jun. 06, 1975
Applicant:
Inventors:
Izuo Hayashi, Tokyo, JA;
Yasuo Nannichi, Tokyo, JA;
Assignee:
Nippon Electric Company, Ltd., Tokyo, JA;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01S / ;
U.S. Cl.
CPC ...
331 / ; 2957 / ; 148175 ; 156 17 ; 357 18 ;
Abstract
A strip-geometry semiconductor double-heterostructure laser device includes an n-GaAs substrate on which a first layer of n-Al.sub.x Ga.sub.1-x As and a second layer of p-AlyGa.sub.1-y As are formed by epitaxial growth techniques. A third layer of heat- and Ga melt resistant material of narrow stripe geometry is formed on the second layer. After the second layer and part of the first layer, except for their stripe portions, are meltbacked by Ga melt liquid, a fourth layer of n-Al.sub.z Ga.sub.1-z As is formed by epitaxial growth techniques of the same Ga melt liquid in one process.