Yokohama, Japan

Iwao Ohdomari

This inventor holds 2 USPTO granted patents. Top assignee: Other. Active years: 1994-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Iwao Ohdomari. Retrieved from https://idiyas.com/inventor/iwao-ohdomari

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.8

ph-index = 2

Forward Citations = 23(Granted Patents)


Location History:

  • Kanazawa-ku, Yokohama-shi, Kanagawa, JP (1994)
  • Yokohama, Kanagawa 236, JP (1996)

Company Filing History:

goldMedal2 out of 834,570 
Other
 patents

Years Active: 1994-1996

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2 patents (USPTO):Explore Patents

Title: Iwao Ohdomari: Innovator in Ion Implantation Technology

Introduction

Iwao Ohdomari is a notable inventor based in Kanazawa-ku, Yokohama, Japan. He has made significant contributions to the field of ion implantation technology, holding a total of 2 patents. His work focuses on developing systems that enhance the precision and efficiency of ion implantation processes.

Latest Patents

Ohdomari's latest patents include a "Single Ion Implantation System" and an "Ion Irradiation System and Method." The Single Ion Implantation System is designed for both low-energy (0 to 100 keV) and high-energy (1 to 4 MeV) applications. It utilizes a focused ion beam or micro-ion beam to extract single ions through beam chopping. This system features an electrostatic deflector, an aperture for single ion extraction, and an electrode for generating a retarding electric field, ensuring that single ions can soft-land on a specimen with high accuracy.

The Ion Irradiation System aims to provide a method for applying one or more ions to a target point with exceptional precision. This system includes an ion microprobe, a deflector for directing the ion microbeam, and a micro slit for extracting ions. Additionally, it incorporates a scanning electron microscope for real-time observation and a secondary electron detecting system to monitor emitted secondary electrons.

Career Highlights

Throughout his career, Iwao Ohdomari has focused on advancing ion implantation technologies. His innovative approaches have led to significant improvements in the accuracy and effectiveness of ion implantation processes. His contributions have been recognized within the scientific community, and his patents reflect his commitment to pushing the boundaries of technology in this field.

Collaborations

Ohdomari has collaborated with notable colleagues, including Masaaki Sugimori and Junichi Murayama. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Iwao Ohdomari is a distinguished inventor whose work in ion implantation technology has made a lasting impact. His patents demonstrate his expertise and dedication to advancing the field, making him a key figure in the realm of innovations in Japan.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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