Yokohama, Japan

Iwao Kurkawa

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Komatsu Seisakusho. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Iwao Kurkawa. Retrieved from https://idiyas.com/inventor/iwao-kurkawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: Iwao Kurkawa: Innovator in Plasma Cutting Technology

Introduction

Iwao Kurkawa is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of plasma cutting technology. His innovative approach has led to the development of a unique method that enhances the efficiency of plasma cutting machines.

Latest Patents

Iwao Kurkawa holds a patent for a "Standoff control method and apparatus for plasma cutting machine." This invention aims to improve the precision and effectiveness of plasma cutting processes. His work in this area demonstrates his commitment to advancing industrial technology.

Career Highlights

Iwao Kurkawa is associated with Kabushiki Kaisha Komatsu Seisakusho, a prominent company in the manufacturing sector. His role at the company has allowed him to apply his inventive skills in practical applications. His contributions have been instrumental in enhancing the company's technological capabilities.

Collaborations

Iwao Kurkawa has collaborated with notable coworkers, including Yozo Nishi and Eiichi Nozaki. Their teamwork has fostered an environment of innovation and creativity within their projects.

Conclusion

Iwao Kurkawa's work in plasma cutting technology exemplifies the impact of innovation in industrial applications. His patent and collaborations highlight his dedication to advancing technology in his field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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