Bestwig, Germany

Ivonne Benzler

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ivonne Benzler. Retrieved from https://idiyas.com/inventor/ivonne-benzler

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Ivonne Benzler: Innovator in Semiconductor Technology

Introduction

Ivonne Benzler is a prominent inventor based in Bestwig, Germany. She has made significant contributions to the field of semiconductor technology, showcasing her expertise through her innovative designs and patents.

Latest Patents

Ivonne holds a patent for a semiconductor device that includes a baseplate and both first and second insulated gate bipolar transistor (IGBT) substrates coupled to the baseplate. This advanced semiconductor device also features a first and second diode substrate, along with multiple control substrates. The intricate design involves bond wires that connect the IGBT substrates to the control substrates, enhancing the device's functionality and efficiency. Her patent is a testament to her ingenuity and technical skills in the semiconductor industry, with a total of 1 patent to her name.

Career Highlights

Ivonne is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. Her role at Infineon has allowed her to work on cutting-edge technologies and contribute to the advancement of the semiconductor field.

Collaborations

Throughout her career, Ivonne has collaborated with notable colleagues, including Reinhold Spanke and Waleri Brekel. These partnerships have fostered a creative environment that encourages innovation and the development of new technologies.

Conclusion

Ivonne Benzler stands out as a talented inventor in the semiconductor industry, with her innovative designs and collaborative spirit driving advancements in technology. Her contributions continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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