This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1999.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999
Title: The Innovations of Itsuro Ishizaki
Introduction
Itsuro Ishizaki is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on methods that enhance the processing of semiconductor substrates.
Latest Patents
Ishizaki holds a patent for a "Method and device for dissolving surface layer of semiconductor substrate." This patent discloses a method of dissolving a surface of a semiconductor substrate or a thin-film surface layer formed on the semiconductor substrate using an oxidizing agent and fluorine-series gas. The method is characterized by controlling the initial dissolution rate by gradually increasing the concentration of fluorine-series gas introduced in a dissolving solution containing the oxidizing agent. He has 1 patent to his name.
Career Highlights
Ishizaki is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to contribute to advancements in semiconductor processing techniques.
Collaborations
Some of his coworkers include Minako Kaneko and Ayako Shimazaki. Their collaboration has likely fostered an environment of innovation and creativity within their projects.
Conclusion
Itsuro Ishizaki's contributions to semiconductor technology through his innovative methods demonstrate his expertise and commitment to advancing the field. His work continues to influence the industry positively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile