Yokohama, Japan

Itsunari Hayabuchi


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 23(Granted Patents)


Location History:

  • Saitama, JP (1984)
  • Yokohama, JP (1989)

Company Filing History:


Years Active: 1984-1989

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2 patents (USPTO):Explore Patents

Title: Innovations of Itsunari Hayabuchi

Introduction

Itsunari Hayabuchi is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor memory technology. With a total of two patents to his name, his work has had a lasting impact on portable electronic devices.

Latest Patents

Hayabuchi's latest patents include a nonvolatile semiconductor memory and a non-volatile memory circuit for portable electronic devices. The nonvolatile semiconductor memory patent describes a MONOS type memory that features a channel forming semiconductor region, a tunnel insulating film, a silicon nitride film, a silicon oxide film, and a conductive electrode. This innovative design allows for efficient charge injection and improved memory performance. His second patent focuses on a writable non-volatile memory circuit designed for portable electronic devices, such as electronic timepieces. This circuit enhances power consumption and integrates a volatile memory with a serial input for data writing and verification.

Career Highlights

Throughout his career, Hayabuchi has worked with prominent organizations, including Citizen Watch Company, Ltd. He has also served as the Director-General of the Agency of Industrial Science and Technology, where he contributed to advancements in industrial technology.

Collaborations

Hayabuchi has collaborated with notable individuals in his field, including Yutaka Hayashi and Tatsuo Tsuchiya. Their combined expertise has furthered the development of innovative technologies in semiconductor memory.

Conclusion

Itsunari Hayabuchi's contributions to semiconductor memory technology have established him as a key figure in the industry. His patents reflect a commitment to innovation and efficiency in portable electronic devices.

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